Nowadays, metal oxide semiconductors (MOS) are utilized extensively in the fabrication of inorganic, organic, and hybrid perovskite solar cells due to their abundance and non-toxicity. Cupric oxide (CuO) and cuprous oxide (Cu2O) are the two most common forms of MOS. Cu2O and CuO are inherently p-type as a result of copper vacancy defects. Furthermore, Cu2O as a semiconductor material can demonstrate both n-type or p-type properties based on growth method and conditions. In the current work, cuprous oxide (p-Cu2O) nanoparticles have been successfully synthesized on copper foils by using thermal oxidation. The grown thin films then were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Energy-dispersive X-ray spectroscopy (EDX). The results are shown the growth of Cu2O nanoparticles with diameters of about 16 nm to about 57 nm using dry oxidation. The average crystalline size of Cu2O thin films was observed is about 35nm. Also, the results from EDX show high purity in the prepared Cu2O film